mitsubishi igbt modules CM150DX-24S high power switching use insulated type 1 feb. 2011 CM150DX-24S - 6 th generation nx series - collector current i c ......... ....?............? 150 a collector-emitter voltage v ces ...........? 1200 v maximum junction temperature t jmax ... 175 c flat base type copper base plate (non-plating) tin plating pin terminals rohs directive compliant dual (half-bridge) ul recognized under ul1557, file e323585 application ac motor control, motion/servo control, power supply, etc. outline drawing & internal connection dimension in mm terminal section a internal connection tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 t=0.8 the tolerance of size between terminals is assumed to be 0.4. e2 (47) es1 (16) di1 di2 tr1 g1 (1 5) cs1 (22) g2 (38) es2 (39) th th1 (1) th2 (2) tr2 c1 (48) c2e1 (24) c2e1 (23) ntc
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 2 feb. 2011 absolute maximum ratings (t j =25 c, unless otherwise specified) inverter part igbt/fwdi symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1200 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =120 c (note.2) 150 i crm collector current pulse, repetitive (note.3) 300 a p tot total power dissipation t c =25 c (note.2, 4) 1150 w i e (note.1) t c =25 c (note.2, 4) 150 i erm (note.1) emitter current pulse, repetitive (note.3) 300 a module symbol item conditions rating unit t jmax maximum junction temperature - 175 t cmax maximum case temperature (note.2) 125 c t jop operating junction temperature - -40 ~ +150 t stg storage temperature - -40 ~ +125 c v isol isolation voltage terminals to base pl ate, rms, f=60 hz, ac 1 min 2500 v electrical characteristics (t j =25 c, unless otherwise specified) inverter part igbt/fwdi limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 0.5 a v ge(th) gate-emitter threshold voltage i c =15 ma, v ce =10 v 5.4 6.0 6.6 v t j =25 c - 1.80 2.25 t j =125 c - 2.00 - v cesat (terminal) collector-emitter saturation voltage i c =150 a (note.5) , v ge =15 v t j =150 c - 2.05 - v t j =25 c - 1.70 2.15 t j =125 c - 1.90 - v cesat (chip) collector-emitter saturation voltage i c =150 a (note.5) , v ge =15 v t j =150 c - 1.95 - v c ies input capacitance - - 15 c oes output capacitance - - 3.0 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 0.25 nf q g gate charge v cc =600 v, i c =150 a, v ge =15 v - 350 - nc t d(on) turn-on delay time - - 800 t r rise time v cc =600 v, i c =150 a, v ge =15 v, - - 200 t d(off) turn-off delay time - - 600 t f fall time r g =0 ? , inductive load - - 300 ns t j =25 c - 1.8 2.25 t j =125 c - 1.8 - v ec (note.1) (terminal) emitter-collector voltage i e =150 a (note.5) , g-e short-circuited t j =150 c - 1.8 - v t j =25 c - 1.7 2.15 t j =125 c - 1.7 - v ec (note.1) (chip) emitter-collector voltage i e =150 a (note.5) , g-e short-circuited t j =150 c - 1.7 - v t rr (note.1) reverse recovery time v cc =600 v, i e =150 a, v ge =15 v, - - 300 ns q rr (note.1) reverse recovery charge r g =0 ? , inductive load - 8.0 - c e on turn-on switching energy per pulse v cc =600 v, i c =i e =150 a, - 24.2 - e off turn-off switching energy per pulse v ge =15 v, r g =0 ? , t j =150 c, - 16.0 - e rr (note.1) reverse recovery energy per pulse inductive load - 12.2 - mj main terminals-chip, per switch, r cc'+ee' internal lead resistance t c =25 c (note.2) - - 1.8 m ? r g internal gate resistance per switch - 13 - ?
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 3 feb. 2011 electrical characteristics (cont.; t j =25 c, unless otherwise specified) ntc thermistor part limits symbol item conditions min. typ. max. unit r 25 zero-power resistance t c =25 c (note.2) 4.85 5.00 5.15 k ? r/r deviation of resistance t c =100 c, r 100 =493 ? -7.3 - +7.8 % b (25/50) b-constant approximate by equation (note.6) - 3375 - k p 25 power dissipation t c =25 c (note.2) - - 10 mw thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per igbt - - 0.13 k/w r th(j-c)d thermal resistance (note.2) junction to case, per fwdi - - 0.23 k/w case to heat sink, per 1 module, r th(c-s) contact thermal resistance (note.2) thermal grease applied (note.7) - 15 - k/kw mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 6 screw 3.5 4.0 4.5 m s mounting torque mounting to heat sink m 5 screw 2.5 3.0 3.5 nm terminal to terminal 11.55 - - d s creepage distance terminal to base plate 12.32 - - mm terminal to terminal 10.00 - - d a clearance terminal to base plate 10.85 - - mm m weight - - 350 - g e c flatness of base plate on the centerline x, y (note.8) 0 - +100 m note.1: represent ratings and characteristics of the ant i-parallel, emitter-collector free wheeling diode (fwdi). note.2: case temperature (t c ) and heat sink temperature (t s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. refer to the figure of chip location. the heat sink thermal resistance should measure just under the chips. note.3: pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. note.4: junction temperature (t j ) should not increase beyond t jmax rating. note.5: pulse width and repetition rate should be su ch as to cause negligible temperature rise. refer to the figure of test circuit for v cesat , v ec . note.6: ) t t /( ) r r ln( b ) / ( 50 25 50 25 50 25 1 1 ? ? r 25 : resistance at absolute temperature t 25 [k]; t 25 =25 [c]+273.15=298.15 [k] r 50 : resistance at absolute temperature t 50 [k]; t 50 =50 [c]+273.15=323.15 [k] note.7: typical value is measured by using thermally conductive grease of =0.9 w/(mk). note.8: the base plate (mounting side) fl atness measurement points (x, y) are as follows of the following figure. y x +:convex -:concave +:convex -:concave mounting side mounting side mounting side note.9: japan electronics and information technol ogy industries association (jeita) standards, "eiaj ed-4701/300: environmental and endurance test met hods for semiconductor devic es (stress test i)" note.10: use the following screws when mounting t he printed circuit board (pcb) on the stand offs. "m2.610 or m2.612 self tapping screw" the length of the screw depends on the thickness of the pcb.
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 4 feb. 2011 recommended operating conditions (t a =25 c) limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across c1-e2 - 600 850 v v geon gate (-emitter drive) voltage appli ed across g1-es1/g2-es2 13.5 15.0 16.5 v r g external gate resistance per switch 0 - 30 ? chip location (top view) dimension in mm, tolerance: 1 mm tr1/tr2: igbt, di1/di2: fwdi, th: ntc thermistor. each mark points the center position of each chip.
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 5 feb. 2011 test circuit and waveforms i c 23/24 47 39 38 16 15 v short- circuited 48 v ge =15 v 22 i c 23/24 47 39 38 16 15 short- circuited 48 v ge =15 v v 22 i e 23/24 47 39 38 16 15 v short- circuited 48 short- circuited 22 i e 23/24 47 39 38 16 15 short- circuited 48 v short- circuited 22 tr1 tr2 di1 di2 v cesat test circuit v ec test circuit t t f t r t d(on) i c 10% 90 % 90 % v ge v cc i e i c r g -v ge +v ge -v ge load 0 v 0 a + 0 v ce v ge 0 v t d(off) t i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.02i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery ener gy test waveforms (integral time instruction drawing)
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 6 feb. 2011 performance curves inverter part output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c (chip) v ge =15 v (chip) collector current i c (a) 0 50 100 150 200 250 300 0246810 collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 3.5 0 50 100 150 200 250 300 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c (chip) g-e short-circuited (chip) collector-emitter saturation voltage v cesat (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 10 100 1000 0123 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =150 c t j =125 c t j =25 c v ge =20 v 12 v 11 v 10 v 9 v 13.5 v 15 v t j =150 c t j =125 c t j =25 c i c =300 a i c =150 a i c =60 a
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 7 feb. 2011 half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c =150 a, v ge =15 v, inductive load --------------- : t j =150 c, - - - - -: t j =125 c switching time (ns) 10 100 1000 10 100 1000 switching time (ns) 10 100 1000 1 10 100 collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c /i e =150 a, v ge =15 v, inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c switching energy (mj) reverse recovery energy (mj) 1 10 100 10 100 1000 switching energy (mj) reverse recovery energy (mj) 1 10 100 0.1 1 10 100 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) t d(on) t r t f t d(off) e on e off e rr e on e off e rr t d(off) t r t f t d(on)
mitsubishi igbt modules CM150DX-24S high power switching use insulated type 8 feb. 2011 capacitance characteristics (typical) free wheeling diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c capacitance (nf) 0.01 0.1 1 10 100 0.1 1 10 100 t rr (ns), i rr (a) 10 100 1000 10 100 1000 collector-emitter voltage v ce (v) emitter current i e (a) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) v cc =600 v, i c =150 a, t j =25 c single pulse, t c =25c gate-emitter voltage v ge (v) 0 5 10 15 20 0 100 200 300 400 500 normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 r th(j-c)q =0.13 k/w, r th(j-c)d =0.23 k/w gate charge q g (nc) time (s) c ies c oes c res i rr t rr
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